Effect of the RF Power of PECVD on the Crystalline Fractions of Microcrystalline Silicon (μc-Si:H) Films and Their Structural, Optical, and Electronic Properties

In this work, we report on the deposition of microcrystalline silicon (µc-Si:H) films produced from silane (SiH4), hydrogen (H2), and argon (Ar) mixtures using plasma-enhanced chemical vapor (PECVD) technique at 200 °C. Particularly, studied effect RF power crystalline fraction (XC) deposited films, have correlated XC with their optical, electrical, structural characteristics. Different types characterization were performed in µc-Si:H film series. We used several techniques, such as Raman scattering spectroscopy, Fourier transform infrared spectroscopy (FTIR), atomic force microscopy (AFM), field emission scanning electron (FE-SEM), transmission (TEM), among others. Our results show that had a strong there is an optimal value for producing largest XC.